View 2n4123 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
[]]]]]]]]]]]]]]] []]]]]]]]]]]]]] 2N4123 C TO-92 B E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V V Collector-Base Voltage 40 V CBO VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 200 mA -55 to +150 TJ, Tstg Operating and Storage Junction Temperature Range °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on application
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2n4123 Datasheet, Design, MOSFET, Power
2n4123 RoHS, Compliant, Service, Triacs, Semiconductor
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