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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2n4123re

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4123/D General Purpose Transistors NPN Silicon 2N4123 2N4124 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29–04, STYLE 1 Rating Symbol 2N4123 2N4124 Unit TO–92 (TO–226AA) Collector–Emitter Voltage VCEO 30 25 Vdc Collector–Base Voltage VCBO 40 30 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 200 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to

Keywords

 2n4123re Datasheet, Design, MOSFET, Power

 2n4123re RoHS, Compliant, Service, Triacs, Semiconductor

 2n4123re Database, Innovation, IC, Electricity

 

 
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