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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2n5060

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5060/D 2N5060 2N5061 * Silicon Controlled Rectifiers 2N5062 Reverse Blocking Triode Thyristors * 2N5064 *Motorola preferred devices . . . Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and SCRs sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA (TO-92) 0.8 AMPERES RMS package which is readily adaptable for use in automatic insertion equipment. 30 thru 200 VOLTS • Sensitive Gate Trigger Current — 200 ľA Maximum • Low Reverse and Forward Blocking Current — 50 ľA Maximum, TC = 125°C • Low Holding Current — 5 mA Maximum • Passivated Surface for Reliability and Uniformity G A

Keywords

 2n5060 Datasheet, Design, MOSFET, Power

 2n5060 RoHS, Compliant, Service, Triacs, Semiconductor

 2n5060 Database, Innovation, IC, Electricity

 

 
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