View 2n5086re datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5086/D Amplifier Transistors 2N5086 PNP Silicon * 2N5087 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29�04, STYLE 1 Rating Symbol Value Unit TO�92 (TO�226AA) Collector�Emitter Voltage VCEO 50 Vdc Collector�Base Voltage VCBO 50 Vdc Emitter�Base Voltage VEBO 3.0 Vdc Collector Current � Continuous IC 50 mAdc Total Device Dissipation @ TA = 25�C PD 625 mW Derate above 25�C 5.0 mW/�C Total Device Dissipation @ TC = 25�C PD 1.5 Watts Derate above 25�C 12 mW/�C Operating and Storage Junction TJ, Tstg �55 to +150 �C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 �C/W Thermal Resistance, Ju