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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5088/D Amplifier Transistors NPN Silicon 2N5088 2N5089 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29�04, STYLE 1 Rating Symbol 2N508 2N508 Unit TO�92 (TO�226AA) 8 9 Collector�Emitter Voltage VCEO 30 25 Vdc Collector�Base Voltage VCBO 35 30 Vdc Emitter�Base Voltage VEBO 3.0 Vdc Collector Current � Continuous IC 50 mAdc Total Device Dissipation @ TA = 25�C PD 625 mW Derate above 25�C 5.0 mW/�C Total Device Dissipation @ TC = 25�C PD 1.5 Watts Derate above 25�C 12 mW/�C Operating and Storage Junction TJ, Tstg �55 to +150 �C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA(1) 200 �C/W Thermal Resistance, Junction to