View 2n5210 sam datasheet:

2N5210 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 50V • Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 4.5 V Collector Current IC 50 mA Collector Dissipation PC 625 mW Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 • Refer to 2N5088 for graphs 1.Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit 50 Collector-Base Breakdown Voltage BVCBO IC=100 , IE=0 V Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 50 V Collector Cut-off Current ICBO VCB=35V, IE=0 50 nA Emitter Cu