View 2n5401 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2N5401 MMBT5401 C E C TO-92 B B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 150 V VCBO Collector-Base Voltage 160 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 600 mA -55 to +150 TJ, Tstg Operating and Storage Junction Temperature Range °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involv
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2n5401 Datasheet, Design, MOSFET, Power
2n5401 RoHS, Compliant, Service, Triacs, Semiconductor
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