View 2n5401 sam datasheet:

2N5401 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -5 V Collector Current IC -600 mA Collector Dissipation PC 625 mW Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1.Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit -160 Collector-Base Breakdown Voltage BVCBO IC= -100 , IE=0 V Collector-Emitter Breakdown Voltage BVCEO IC= -1mA, IB=0 -150 V V Emitter-Base Breakdown Voltage BVEBO IE= -10 , IC=0 -5 Collector Cut-off C