All Transistors. Datasheet

 

View 2n5401 utc datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2n5401_utc

UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc(max)=625mW 1 *High current gain APPLICATIONS *Telephone Switching Circuit TO-92 *Amplifier 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -160 V Collector-emitter voltage VCEO -150 V Emitter-base voltage VEBO -5 V Collector dissipation Pc 625 mW Collector current Ic -600 mA Junction Temperature Tj 150 °C Storage Temperature TSTG -55 ~ +150 °C ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-base breakdown voltage BVCBO Ic=-100µA,IE=0 -

Keywords

 2n5401 utc Datasheet, Design, MOSFET, Power

 2n5401 utc RoHS, Compliant, Service, Triacs, Semiconductor

 2n5401 utc Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.