View 2n5457re datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5457/D JFETs General Purpose 2N5457 N�Channel � Depletion 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit 1 2 3 Drain�Source Voltage VDS 25 Vdc Drain�Gate Voltage VDG 25 Vdc CASE 29�04, STYLE 5 Reverse Gate�Source Voltage VGSR �25 Vdc TO�92 (TO�226AA) Gate Current IG 10 mAdc Total Device Dissipation @ TA = 25�C PD 310 mW Derate above 25�C 2.82 mW/�C Junction Temperature Range TJ 125 �C Storage Channel Temperature Range Tstg �65 to +150 �C ELECTRICAL CHARACTERISTICS (TA = 25�C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate�Source Breakdown Voltage V(BR)GSS �25 � � Vdc (IG = �10 �Adc, VDS = 0) Gate Reverse Current