View 2n5457re datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5457/D JFETs General Purpose 2N5457 N–Channel — Depletion 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit 1 2 3 Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc CASE 29–04, STYLE 5 Reverse Gate–Source Voltage VGSR –25 Vdc TO–92 (TO–226AA) Gate Current IG 10 mAdc Total Device Dissipation @ TA = 25°C PD 310 mW Derate above 25°C 2.82 mW/°C Junction Temperature Range TJ 125 °C Storage Channel Temperature Range Tstg –65 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate–Source Breakdown Voltage V(BR)GSS –25 — — Vdc (IG = –10 µAdc, VDS = 0) Gate Reverse Current