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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2n5485

2N5484 MMBF5484 2N5485 MMBF5485 2N5486 MMBF5486 G S G TO-92 S SOT-23 D D Mark: 6B / 6M / 6H NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage - 25 V IGF Forward Gate Current 10 mA Operating and Storage Junction Temperature Range -55 to +150 C TJ ,Tstg ° *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state l

Keywords

 2n5485 Datasheet, Design, MOSFET, Power

 2n5485 RoHS, Compliant, Service, Triacs, Semiconductor

 2n5485 Database, Innovation, IC, Electricity

 

 
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