View 2n6274re datasheet:

Order this document MOTOROLA by 2N6274/D SEMICONDUCTOR TECHNICAL DATA 2N6274 High-Power NPN Silicon 2N6275 Transistors 2N6277 * . . . designed for use in industrial–military power amplifer and switching circuit *Motorola Preferred Device applications. • High Collector Emitter Sustaining — 50 AMPERE VCEO(sus) = 100 Vdc (Min) — 2N6274 POWER TRANSISTORS VCEO(sus) = 120 Vdc (Min) — 2N6275 NPN SILICON VCEO(sus) = 150 Vdc (Min) — 2N6277 100, 120, 140, 150 VOLTS • High DC Current Gain — 250 WATTS hFE = 30–120 @ IC = 20 Adc hFE = 10 (Min) @ IC = 50 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc • Fast Switching Times @ IC 20 Adc tr = 0.35 µs (Max) ts = 0.8 µs (Max) IIIIIIIIIIIIIIIIIIIIIII tf = 0.25 µs (Max) • Complement to 2N