View 2n6426 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Discrete POWER & Signal Technologies 2N6426 C TO-92 B E NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V V Collector-Base Voltage 40 V CBO VEBO Emitter-Base Voltage 12 V IC Collector Current - Continuous 1.2 A -55 to +150 TJ, Tstg Operating and Storage Junction Temperature Range °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The f
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2n6426 Datasheet, Design, MOSFET, Power
2n6426 RoHS, Compliant, Service, Triacs, Semiconductor
2n6426 Database, Innovation, IC, Electricity
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