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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2n6426

Discrete POWER & Signal Technologies 2N6426 C TO-92 B E NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V V Collector-Base Voltage 40 V CBO VEBO Emitter-Base Voltage 12 V IC Collector Current - Continuous 1.2 A -55 to +150 TJ, Tstg Operating and Storage Junction Temperature Range °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The f

Keywords

 2n6426 Datasheet, Design, MOSFET, Power

 2n6426 RoHS, Compliant, Service, Triacs, Semiconductor

 2n6426 Database, Innovation, IC, Electricity

 

 
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