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View 2n6426re datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2n6426re

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6426/D Darlington Transistors 2N6426* NPN Silicon 2N6427 *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit CASE 29–04, STYLE 1 Collector–Emitter Voltage VCEO 40 Vdc TO–92 (TO–226AA) Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 12 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to RqJA 200 °C/W Ambient Thermal Resistance, Junc

Keywords

 2n6426re Datasheet, Design, MOSFET, Power

 2n6426re RoHS, Compliant, Service, Triacs, Semiconductor

 2n6426re Database, Innovation, IC, Electricity

 

 
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