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View 2n6487re datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2n6487re

Order this document MOTOROLA by 2N6487/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6487 Complementary Silicon Plastic Power Transistors * 2N6488 PNP . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 15 Amperes — 2N6490 hFE = 20–150 @ IC = 5.0 Adc hFE = 5.0 (Min) @ IC = 15 Adc 2N6491* • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc (Min) – 2N6487, 2N6490 *Motorola Preferred Device VCEO(sus) = 80 Vdc (Min) – 2N6488, 2N6491 • High Current Gain — Bandwidth Product 15 AMPERE IIIIIIIIIIIIIIIIIIIIIII fT = 5.0 MHz (Min) @ IC = 1.0 Adc COMPLEMENTARY IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIII IIII • TO–220AB Compact Package SILICON IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III POWER TRANSISTORS I

Keywords

 2n6487re Datasheet, Design, MOSFET, Power

 2n6487re RoHS, Compliant, Service, Triacs, Semiconductor

 2n6487re Database, Innovation, IC, Electricity

 

 
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