View 2n7002 sam detailed specifications:
POWER MOSFET, IGBT, IC, TRIACS DATABASE
N-CHANNEL SmaII SignaI MOSFET FEATURES BVDSS = 60 V Lower Rds(on) RDS(on) = 5.0 Improved Inductive Ruggedness Fast Switching Times ID = 115 mA Lower Input Capacitance Extended Safe Operating Area SOT-23 Improved High Temperature Reliability 2 1 3 1.Gate 2. Drain 3. Source Product Summary Part Number BVdss Rds(on) ID 115mA 60V 2N7002 5.0 Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 60 V Continuous Drain Current (TC=25 ) 115 ID mA Continuous Drain Current (TC=100 ) 73 IDM Drain Current-Pulsed mA 800 VGS Gate-to-Source Voltage 20 V Total Power Dissipation (TC=25 ) W 0.2 PD Linear Derating Factor 0.16 W/ Operating and Junction Storage TJ , TSTG - 55 to +150 Temperature Range Thermal Resistance Symb... See More ⇒
Keywords
2n7002 sam Design, MOSFET, Power
2n7002 sam RoHS, Compliant, Service, Triacs, Semiconductor
2n7002 sam Innovation, IC, Electricity
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