View 2n7002lt1 datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7002LT1/D TMOS FET Transistor 2N7002LT1 3 DRAIN N–Channel Enhancement Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc CASE 318–08, STYLE 21 SOT–23 (TO–236AB) Drain–Gate Voltage (RGS = 1.0 M?) VDGR 60 Vdc Drain Current — Continuous TC = 25°C(1) ID ±115 mAdc Drain Current — Continuous TC = 100°C(1) ID ±75 Drain Current — Pulsed(2) IDM ±800 Gate–Source Voltage — Continuous VGS ±20 Vdc — Non–repetitive (tp ? 50 µs) VGSM ±40 Vpk THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board,(3) TA = 25°C PD 225 mW Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient R?JA 556 °C/W Total