View 2sa1022 e datasheet:

Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SC2295 +0.2 2.8 –0.3 +0.25 Features 0.65± 0.15 1.5 –0.05 0.65± 0.15 High transition frequency fT. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V 0.1 to 0.3 Collector to emitter voltage VCEO –20 V 0.4± 0.2 Emitter to base voltage VEBO –5 V Collector current IC –30 mA Collector power dissipation PC 200 mW 1:Base JEDEC:TO–236 2:Emitter EIAJ:SC–59 Junction temperature Tj 150 ?C 3:Collector Mini Type Package Storage temperature Tstg –55 ~ +150 ?C Marking symbol : E