View 2sa1049 datasheet:

2SA1049 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1049 Audio Frequency Amplifier Applications Unit: mm • Small package. • High breakdown voltage: V = -120 V CEO • High h h = 200~700 FE: FE • Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SC2459. Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Base current IB -20 mA JEDEC ? Collector power dissipation PC 200 mW Junction temperature Tj 125 °C JEITA ? Storage temperature range Tstg -55~125 °C TOSHIBA 2-4E1A Weight: 0.13 g (typ.) Electrical