View 2sa1091 datasheet:

2SA1091 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1091 High Voltage Control Applications Unit: mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = -300 V, V = -300 V CEO • Low saturation voltage: V = -0.5 V (max) CE (sat) • Small collector output capacitance: C = 6 pF (typ.) ob • Complementary to 2SC2551. Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -300 V Collector-emitter voltage VCEO -300 V Emitter-base voltage VEBO -8 V Collector current IC -100 mA Base current IB -20 mA JEDEC TO-92 Collector power dissipation PC 400 mW JEITA SC-43 Junction temperature Tj 150 °C TOSHIBA 2-5F1B Storage temperature r