View 2sa1128 e datasheet:

Transistor 2SA1128 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 5.0± 0.2 4.0± 0.2 Features Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converter circuits. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO –25 V 0.45 –0.1 0.45 –0.1 Collector to emitter voltage VCEO –20 V 1.27 1.27 Emitter to base voltage VEBO –7 V Peak collector current ICP –1 A 1 2 3 1:Emitter Collector current IC – 0.5 A 2:Collector 3:Base Collector power dissipation PC 600 mW 2.54± 0.15 JEDEC:TO–92 Junction temperature Tj 150 ?C EIAJ:SC–43A Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min ty