View 2sa1241 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1241 Power Amplifier Applications Unit: mm Power Switching Applications • Low Collector saturation voltage: VCE (sat) = -0.5 V (max) (I = -1 A) C • Excellent switching time: t = 1.0 µs (typ.) stg • Complementary to 2SC3076 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -2 A Base current IB -1 A Ta = 25°C 1.0 Collector power PC W dissipation Tc = 25°C 10 JEDEC ? Junction temperature Tj 150 °C JEITA ? Storage temperature range Tstg -55 to 150 °C TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ? JEITA ? TOSHIBA 2-7J1A Weight: 0.36 g (typ.
Keywords
2sa1241 Datasheet, Design, MOSFET, Power
2sa1241 RoHS, Compliant, Service, Triacs, Semiconductor
2sa1241 Database, Innovation, IC, Electricity
LIST
Last Update
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet