View 2sa1241 datasheet:

2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1241 Power Amplifier Applications Unit: mm Power Switching Applications • Low Collector saturation voltage: VCE (sat) = -0.5 V (max) (I = -1 A) C • Excellent switching time: t = 1.0 µs (typ.) stg • Complementary to 2SC3076 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -2 A Base current IB -1 A Ta = 25°C 1.0 Collector power PC W dissipation Tc = 25°C 10 JEDEC ? Junction temperature Tj 150 °C JEITA ? Storage temperature range Tstg -55 to 150 °C TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ? JEITA ? TOSHIBA 2-7J1A Weight: 0.36 g (typ.