View 2sa1255 datasheet:

2SA1255 TOSHIBA Transistor Silicon PNP Triple Diffused (PCT process) 2SA1255 High Voltage Switching Applications Unit: mm • High voltage: VCBO = -200 V (min) V = -200 V (min) CEO • Small package • Complementary to 2SC3138 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -200 V Collector-emitter voltage VCEO -200 V Emitter-base voltage VEBO -5 V Collector current IC -50 mA Base current IB -20 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 °C JEDEC TO-236MOD Storage temperature range Tstg -55~125 °C JEITA SC-59 TOSHIBA 2-3F1A Marking Weight: 0.012 g (typ.) 1 2003-03-27 2SA1255 Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max U