View 2sa1298 datasheet:

2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1298 Low Frequency Power Amplifier Application Unit: mm Power Switching Applications • High DC current gain: hFE = 100~320 • Low saturation voltage: V = -0.4 V (max) CE (sat) (I = -500 mA, I = -20 mA) C B • Suitable for driver stage of small motor • Complementary to 2SC3265 • Small package Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -5 V Collector current IC -800 mA JEDEC TO-236MOD Base current IB -160 mA JEITA SC-59 Collector power dissipation PC 200 mW Junction temperature Tj 150 °C TOSHIBA 2-3F1A Storage temperature range Tstg -55~150 °C Weight: 0.012 g (typ.)