View 2sa1300 datasheet:

2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications � High DC current gain and excellent hFE linearity : h = 140~600 (V = -1 V, I = -0.5 A) FE (1) CE C : h = 60 (min), 120 (typ.) (V = -1 V, I = -4 A) FE (2) CE C � Low saturation voltage: V = -0.5 V (max) CE (sat) (I = -2 A, I = -50 mA) C B Maximum Ratings (Ta = = 25�C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -20 V VCES -20 Collector-emitter voltage V VCEO -10 Emitter-base voltage VEBO -6 V DC IC -2 JEDEC TO-92 Collector current A Pulsed ICP -5 JEITA SC-43 (Note 1) TOSHIBA 2-5F1B Base current IB -0.2 A Collector power dissipation PC 750 mW Weight: 0.21 g (typ.) Ju