View 2sa1312 datasheet:

2SA1312 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1312 Audio Frequency Low Noise Amplifier Applications Unit: mm • High voltage: VCEO = -120 V • Excellent h linearity: h (I = -0.1 mA)/ h (I = -2 mA) FE FE C FE C h= 0.95 (typ.) • High hFE: hFE = 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz • Complementary to 2SC3324 • Small package Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Base current IB -20 mA JEDEC TO-236MOD Collector power dissipation PC 150 mW JEITA SC-59 Junction temperature Tj 125 °C TOSHIBA 2-3F1A Storage temperature range Tstg -55~125 °C W