View 2sa1313 datasheet:

2SA1313 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1313 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at V = -6 V, I = -400 mA CE C • High voltage: V = -50 V (min) CEO • Complementary to 2SC3325 • Small package Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -500 mA JEDEC TO-236MOD Base current IB -50 mA JEITA SC-59 Collector power dissipation PC 200 mW TOSHIBA 2-3F1A Junction temperature Tj 150 °C Weight: 0.012 g (typ.) Storage temperature range Tstg -55~150 °C Marki