View 2sa1314 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1314 Strobe Flash Applications Unit: mm Audio Power Applications • High DC current gain and excellent linearity : h = 140 to 600 (V = -1 V, I = -0.5 A) FE (1) CE C : h = 60 (min), 120 (typ.), (V = -1 V, I = -4 A) FE (2) CE C • Low saturation voltage : V = -0.5 V (max) (I = -2 A, I = -50 mA) CE (sat) C B • Small package • Complementary to 2SC2982 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO -10 V Emitter-base voltage VEBO -6 V PW-MINI DC IC -2 JEDEC ? Collector current A Pulsed JEITA SC-62 ICP -4 (Note 1) TOSHIBA 2-5K1A Base current IB -2 A Weight: 0.05 g (typ.) PC 500 Collector power
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2sa1314 Datasheet, Design, MOSFET, Power
2sa1314 RoHS, Compliant, Service, Triacs, Semiconductor
2sa1314 Database, Innovation, IC, Electricity
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