View 2sa1316 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SA1316 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1316 For Low Noise Audio Amplifier Applications and Unit: mm Recommended for the First Stages of MC Head Amplifiers • Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.) • Low pulse noise. Low 1/f noise • Low base spreading resistance: r = 2.0 ? (typ.) bb’ • Complementary to 2SC3329 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Base current IB -20 mA JEDEC TO-92 Collector power dissipation PC 400 mW JEITA SC-43 Junction temperature Tj 125 °C TOSHIBA 2-5F1B Storage
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