View 2sa1319 datasheet:

Ordering number:EN1334C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features Package Dimensions · Hgih breakdown voltage. unit:mm · Excellent hFE linearity. 2003A · Wide ASO and highly resistant to breakdown. [2SA1319/2SC3332] · Adoption of MBIT process. Switching Test Circuit JEDEC : TO-92 B : Base (For PNP, the polarity is reversed) EIAJ : SC-43 C : Collector Unit (resistance : ? , capacitance : F) SANYO : NP E : Emitter ( ) : 2SA1319 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)180 V Collector-to-Emitter Voltage VCEO (–)160 V Emitter-to-Base Voltage VEBO (–)6 V Collector Current IC (–)0.7 A Collector Current (Pulse) ICP (–)