View 2sa1323 e datasheet:

Transistor 2SA1323 Silicon PNP epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SC3314 4.0± 0.2 Features Allowing supply with the radial taping. High transition frequency fT. Optimum for high-density mounting. Absolute Maximum Ratings (Ta=25?C) marking 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage VCEO –20 V 1.27 1.27 Emitter to base voltage VEBO –5 V 2.54± 0.15 Peak collector current ICP –60 mA 1:Emitter Collector current IC –30 mA 2:Collector EIAJ:SC–72 Collector power dissipation PC 300 mW 3:Base New S Type Package Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO V