View 2sa1362 datasheet:

2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1362 Low Frequency Power Amplifier Applications Unit: mm Power Switching Applications � High DC current gain: hFE = 120~400 � Low saturation voltage: V = -0.2 V (max) CE (sat) (I = -400 mA, I = -8 mA) C B � Suitable for driver stage of small motor � Small package Maximum Ratings (Ta = = 25�C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -15 V Collector-emitter voltage VCEO -15 V Emitter-base voltage VEBO -5 V Collector current IC -800 mA Base current IB -160 mA JEDEC TO-236MOD Collector power dissipation PC 200 mW JEITA SC-59 Junction temperature Tj 150 �C Storage temperature range Tstg -55~150 �C TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Marking 1 2003-03-