View 2sa1380 datasheet:

Ordering number:EN1425C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1380/2SC3502 Ultrahigh-Definition CRT Display, Video Output Applications Features Package Dimensions · High breakdown voltage : VCEO? 200V. unit:mm · Small reverse transfer capacitance and excellent 2009B high-frequnecy characteristics [2SA1380/2SC3502] : Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. · Adoption of FBET process JEDEC : TO-126 1 : Emitter ( ) : 2SA1380 2 : Collector 3 : Base Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)200 V Collector-to-Emitter Voltage VCEO (–)200 V Emitter-to-Base Voltage VEBO (–)5 V Collector Current IC (–)100 mA Collector Current (Pulse) ICP (–)200 mA Collector Dissipation PC 1.2