View 2sa1381 datasheet:

Ordering number:EN1426B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1381/2SC3503 High-Definition CRT Display, Video Output Applications Features Package Dimensions · High breakdown voltage : VCEO? 300V. unit:mm · Small reverse transfer capacitance and excellent high 2009A frequency characteristic [2SA1381/2SC3503] : Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V. · Adoption of MBIT process. JEDEC : TO-126 B : Base C : Collector E : Emitter Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)300 V Collector-to-Emitter Voltage VCEO (–)300 V Emitter-to-Base Voltage VEBO (–)5 V Collector Current IC (–)100 mA Collector Current (Pulse) ICP (–)200 mA Collector Dissipation PC 1.2 W 7 W Tc=25?C Ju