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View 2sa1532 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sa1532_e

Transistor 2SA1532 Silicon PNP epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SC3930 2.1± 0.1 0.425 1.25± 0.1 0.425 Features High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage VCEO –20 V 0.2± 0.1 Emitter to base voltage VEBO –5 V Collector current IC –30 mA Collector power dissipation PC 150 mW 1:Base 2:Emitter EIAJ:SC–70 Junction temperature Tj 150 ?C 3:Collector S–Mini Type Package Storage temperature Tstg –55 ~ +150 ?C Marking symbol : E Electrical Characteristics (Ta=25?C) Para

Keywords

 2sa1532 e Datasheet, Design, MOSFET, Power

 2sa1532 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sa1532 e Database, Innovation, IC, Electricity

 

 
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