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2sa1586

2SA1586 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1586 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage and high current: VCEO = -50 V, IC = -150 mA (max) • Excellent h linearity: h (I = -0.1 mA)/ h (I = -2 mA) FE FE C FE C = 0.95 (typ.) • High hFE: hFE = 70~400 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SC4116 • Small package Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA Base current IB -30 mA JEDEC ? Collector power dissipation PC 100 mW JEITA SC-70 Junction temperature Tj 125 °C TOSHIBA 2-2E1A Storage temperature range Tstg

Keywords

 2sa1586 Datasheet, Design, MOSFET, Power

 2sa1586 RoHS, Compliant, Service, Triacs, Semiconductor

 2sa1586 Database, Innovation, IC, Electricity

 

 
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