View 2sa1621 datasheet:

2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1621 Audio Power Amplifier Applications Unit: mm • High hFE: h = 100~320 FE • Complementary to 2SC4210 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current IC -800 mA Base current IB -160 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = -35 V, IE = 0 ? ? -0.1 µA Emitter cut-off c