View 2sa1669 datasheet:

Ordering number:EN2972 PNP Epitaxial Planar Silicon Transistor 2SA1669 High-Frequency Amplifier Applications Features Package Dimensions · High cutoff frequnecy : fT=3.0GHz typ. unit:mm · High power gain : MAG=11dB typ (f=0.9GHz) 2018A · Small noise figure : NF=2.0dB typ (f=0.9GHz) [2SA1669] C : Collector B : Base E : Emitter SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –20 V Collector-to-Emitter Voltage VCEO –15 V Emitter-to-Base Voltage VEBO –3 V Collector Current IC –50 mA Collector Dissipation PC 250 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max