View 2sa1681 datasheet:

2SA1681 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1681 Power Amplifier Applications Unit: mm Power Switching Applications • Low saturation voltage: VCE (sat) = -0.5 V (max) (I C = -1 A) • High speed switching time: t = 300 ns (typ.) stg • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate) • Complementary to 2SC4409 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -6 V Collector current IC -2 A PW-MINI Base current IB -0.2 A JEDEC ? PC 500 Collector power dissipation mW JEITA SC-62 PC 1000 (Note) TOSHIBA 2-5K1A Junction temperature Tj 150 °C Weight: 0.05 g (typ.) Storage temperature range Tst