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2sa1683

Ordering number:EN3012 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1683/2SC4414 Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications Features Package Dimensions · Adoption of FBET process. unit:mm · High breakdown voltage : VCEO>80V. 2033 [2SA1683/2SC4414] B : Base C : Collector E : Emitter ( ) : 2SA1683 SANYO : SPA Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)100 V Collector-to-Emitter Voltage VCEO (–)80 V Emitter-to-Base Voltage VEBO (–)5 V Collector Current IC (–)500 mA Collector Current (Pulse) ICP (–)800 mA Base Current IB (–)100 mA Collector Dissipation PC 300 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Elect

Keywords

 2sa1683 Datasheet, Design, MOSFET, Power

 2sa1683 RoHS, Compliant, Service, Triacs, Semiconductor

 2sa1683 Database, Innovation, IC, Electricity

 

 
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