View 2sa1699 datasheet:

Ordering number:EN2973 PNP Epitaxial Planar Silicon Transistors 2SA1699 High-Voltage Driver Applications Features Package Dimensions · High breakdown voltage. unit:mm · Adoption of MBIT process. 2003A · Excellent hFE linearity. [2SA1699] JEDEC : TO-92 B : Base EIAJ : SC-43 C : Collector SANYO : NP E : Emitter Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –400 V Collector-to-Emitter Voltage VCEO –400 V Emitter-to-Base Voltage VEBO –5 V Collector Current IC –200 mA Colletor Current (Pulse) ICP –400 mA Collector Dissipation PC 600 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit m