View 2sa1702 datasheet:

Ordering number:EN3091 PNP Epitaxial Planar Silicon Transistor 2SA1702 High-Current Switching Applications Features Package Dimensions · Adoption of FBET, MBIT processes. unit:mm · Low saturation votlage. 2064 · Large current capacity. [2SA1702] · Fast switching speed. E : Emitter C : Collector B : Base SANYO : NMP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –25 V Collector-to-Emitter Voltage VCEO –20 V Emitter-to-Base Voltage VEBO –5 V Collector Current IC –5 A Colletor Current (Pulse) ICP –8 A Collector Dissipation PC 1 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit mi