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2sa1723

Ordering number:EN4668 PNP Epitaxial Planar Silicon Transistors 2SA1723 High-Frequency Amplifier, Medium-Power Amplifier Applications Applications Package Dimensions · Wideband amplifiers. unit:mm · High-frequency drivers. 2009B [2SA1723] Features · High fT (fT=1.5GHz typ). · High current (IC=300mA). · Adoption of FBET process. 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –30 V Collector-to-Emitter Voltage VCEO –20 V Emitter-to-Base Voltage VEBO –3 V Collector Current IC –300 mA Collector Current (Pulse) ICP –600 mA Collector Dissipation PC 1.2 W Tc=25?C 5 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C

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