View 2sa1728 datasheet:

Ordering number:EN3132 PNP Epitaxial Planar Silicon Transistor 2SA1728 High-Speed Switching Applications Features Package Dimensions · Adoption of FBET process. unit:mm · Low collector-to-emitter saturation voltage. 2018A · Fast switching speed. [2SA1728] · Small-sized package. C : Collector B : Base E : Emitter SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –50 V Collector-to-Emitter Voltage VCEO –40 V Emitter-to-Base Voltage VEBO –5 V Collector Current IC –500 mA Collector Current (Pulse) ICP –1 A Collector Dissipation PC 200 mW ?C Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Con