View 2sa1730 datasheet:

Ordering number:EN3134 PNP Epitaxial Planar Silicon Transistor 2SA1730 High-Speed Switching Applications Features Package Dimensions · Adoption of FBET , MBIT processes. unit:mm · Large current capacity. 2038 · Low collector-to-emitter saturation voltage. [2SA1730] · Fast switching speed. · Small-sized package. E : Emitter C : Collector B : Base SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –50 V Collector-to-Emitter Voltage VCEO –40 V Emitter-to-Base Voltage VEBO –5 V Collector Current IC –3 A Collector Current (Pulse) ICP –6 A Mounted on ceramic board (250mm2? 0.8mm) Collector Dissipation PC 1.5 W ?C Junction Temperature Tj 150 ?C Storage Temperatur