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View 2sa1762 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sa1762_e

Transistor 2SA1762 Silicon PNP epitaxial planer type For low-frequency driver amplification Unit: mm Complementary to 2SC4606 6.9� 0.1 2.5� 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.85 Absolute Maximum Ratings (Ta=25?C) 0.55� 0.1 0.45� 0.05 Parameter Symbol Ratings Unit 3 2 1 Collector to base voltage VCBO �80 V Collector to emitter voltage VCEO �80 V Emitter to base voltage VEBO �5 V 2.5 2.5 Peak collector current ICP �1 A Collector current IC � 0.5 A 1:Base 2:Collector EIAJ:SC�71 Collector power dissipation PC* 1 W 3:Emitter M Type Mold Package Junction temperature Tj 150 ?C Storage temperature Tstg �55 ~ +150 ?C * Printed circuit board: Coppe

Keywords

 2sa1762 e Datasheet, Design, MOSFET, Power

 2sa1762 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sa1762 e Database, Innovation, IC, Electricity

 

 
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