View 2sa1766 datasheet:

Ordering number:EN3182B PNP Epitaxial Planar Silicon Transistor 2SA1766 High hFE, Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions · Adoption of FBET, MBIT processes. unit:mm · High DC current gain (hFE=500 to 1200). 2038 · Large current capacity. [2SA1766] · Low collector-to-emitter saturation voltage. · High VEBO. E : Emitter C : Collector B : Base SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –30 V Collector-to-Emitter Voltage VCEO –25 V Emitter-to-Base Voltage VEBO –15 V Collector Current IC –300 mA Collector Current (Pulse) ICP –500 mA Base Current IB –60 mA Collector Dissipation PC Mounted on ceramic board (250mm2? 0