View 2sa1767 e datasheet:

Transistor 2SA1767 Silicon PNP epitaxial planer type For general amplification Unit: mm Complementary to 2SC1473A 5.0± 0.2 4.0± 0.2 Features High collector to emitter voltage VCEO. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –300 V +0.2 +0.2 0.45 –0.1 0.45 –0.1 Collector to emitter voltage VCEO –300 V 1.27 1.27 Emitter to base voltage VEBO –5 V Peak collector current ICP –100 mA 1 2 3 1:Emitter Collector current IC –70 mA 2:Collector 3:Base Collector power dissipation PC 750 mW 2.54± 0.15 JEDEC:TO–92 Junction temperature Tj 150 ?C EIAJ:SC–43A Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector to emitter voltage VCEO IC = –100µ A,