View 2sa1767 e datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Transistor 2SA1767 Silicon PNP epitaxial planer type For general amplification Unit: mm Complementary to 2SC1473A 5.0± 0.2 4.0± 0.2 Features High collector to emitter voltage VCEO. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 300 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitter voltage VCEO 300 V 1.27 1.27 Emitter to base voltage VEBO 5 V Peak collector current ICP 100 mA 1 2 3 1:Emitter Collector current IC 70 mA 2:Collector 3:Base Collector power dissipation PC 750 mW 2.54± 0.15 JEDEC:TO92 Junction temperature Tj 150 ?C EIAJ:SC43A Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector to emitter voltage VCEO IC = 100΅ A,
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2sa1767 e Datasheet, Design, MOSFET, Power
2sa1767 e RoHS, Compliant, Service, Triacs, Semiconductor
2sa1767 e Database, Innovation, IC, Electricity
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