View 2sa1790 e datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SC4626 1.6± 0.15 0.4 0.8± 0.1 0.4 Features High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment 1 and automatic insertion through the tape packing and the maga- 3 zine packing. 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit 0.2± 0.1 Collector to base voltage VCBO –30 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –5 V 1:Base Collector current IC –30 mA 2:Emitter EIAJ:SC–75 Collector power dissipation PC 125 mW 3:Collector SS–Mini Type Package Junction temperature Tj 125 ?C Marking symbol : E Storage temperature Tstg –55 ~ +125 ?C Electrical Characteristics (Ta=25?C) Para
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2sa1790 e Datasheet, Design, MOSFET, Power
2sa1790 e RoHS, Compliant, Service, Triacs, Semiconductor
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BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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