View 2sa1813 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number:EN3972 PNP Epitaxial Planar Silicon Transistor 2SA1813 Low-Frequency General-Purpose Amplifier Driver, Muting Circuit Applications Features Package Dimensions · Very small-sized package permitting 2SA1813- unit:mm applied sets to be made smaller and slimmer. 2059A · Adoption of FBET process. [2SA1813] · High DC current gain (hFE=500 to 1200). · Low collector-to-emitter saturation voltage (VCE(sat)? 0.3V). · High VEBO (VEBO? 15V). 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –30 V Collector-to-Emitter Voltage VCEO –25 V Emitter-to-Base Voltage VEBO –15 V Collector Current IC –150 mA Collector Current (Pulse) ICP –300 m
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2sa1813 Datasheet, Design, MOSFET, Power
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